A new gate driver circuit for improved turn-off characteristics of high current IGBT modules

Author

Weis, B. ; Bruckmann, M.

Author_Institution

Siemens AG, Erlangen, Germany

Volume

2

fYear

1998

fDate

12-15 Oct. 1998

Firstpage

1073

Abstract

In hard switching converters, power dissipation can be reduced by using high power device switching speed. However, fast turn-off of high current IGBT modules leads to high voltage transients for which the power devices have to be rated. In this paper, existing overvoltage protection schemes are briefly discussed and a new gate driver circuit with an improved trade-off between voltage transients and turn-off losses is proposed.

Keywords

driver circuits; insulated gate bipolar transistors; losses; modules; overvoltage protection; power convertors; switching circuits; transients; fast turn-off; gate driver circuit; hard switching converters; high current IGBT modules; high power device switching speed; improved turn-off characteristics; overvoltage protection; power dissipation; turn-off losses; voltage transients; Costs; Driver circuits; Inductance; Insulated gate bipolar transistors; Power semiconductor switches; Protection; Semiconductor diodes; Switching converters; Switching loss; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE

Conference_Location

St. Louis, MO, USA

ISSN

0197-2618

Print_ISBN

0-7803-4943-1

Type

conf

DOI

10.1109/IAS.1998.730280

Filename

730280