DocumentCode
2343092
Title
IDDQ sensing technique for high speed IDDQ testing
Author
Takeda, Teppei ; Hashizume, Masaki ; Ichimiya, Mashiro ; Yotsuyanagi, Hiroyuki ; Miura, Yukiya ; Kinoshita, Kozo
Author_Institution
Tokushima Univ., Japan
fYear
2001
fDate
2001
Firstpage
111
Lastpage
116
Abstract
In this paper, a useful technique is proposed for realizing high speed IDDQ tests. By using the technique, load capacitors of the CMOS logic gates can be charged quickly, where the output logic level changes L to H by applying a test input vector to a circuit under test. The technique is applied to built-in IDDQ sensor design and external IDDQ sensor design. It is shown experimentally that high speed IDDQ tests can be realized by using the technique
Keywords
CMOS logic circuits; automatic testing; high-speed integrated circuits; integrated circuit testing; logic gates; logic testing; CMOS logic gates; IDDQ sensing technique; circuit under test; high speed IDDQ testing; high speed tests; load capacitors; output logic level; sensor design; test input vector; CMOS logic circuits; Capacitors; Circuit faults; Circuit testing; Current measurement; Current supplies; Electrical fault detection; Fault detection; Logic gates; Logic testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium, 2001. Proceedings. 10th Asian
Conference_Location
Kyoto
ISSN
1081-7735
Print_ISBN
0-7695-1378-6
Type
conf
DOI
10.1109/ATS.2001.990268
Filename
990268
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