• DocumentCode
    2343121
  • Title

    SEPIC converter with continuous output current and intrinsic voltage doubler characteristic

  • Author

    Ismail, Esam H. ; Fardoun, Abbas A.

  • Author_Institution
    Electr. Eng. Dept., Coll. of Technol. Studies, AL-Shaa´´b
  • fYear
    2008
  • fDate
    24-27 Nov. 2008
  • Firstpage
    431
  • Lastpage
    436
  • Abstract
    A novel single switch two diodes wide conversion ratio step down/up converter is presented. The proposed converter is derived from the conventional single ended primary inductor converter (SEPIC) topology and it can operate into a capacitor-diode voltage multiplier, which offers simple structure, reduced electromagnetic interference (EMI), and reduced semiconductors voltage stress. The main advantages of the proposed converter are the continuous output current, higher voltage conversion ratio, and near zero input/output current ripples compared with the conventional SEPIC converter. The principle of operation and comparison with the conventional SEPIC converter are presented. The performance of the proposed converter is verified through computer-aided simulations and experimental results.
  • Keywords
    electromagnetic interference; power convertors; power semiconductor diodes; switched mode power supplies; voltage multipliers; SEPIC converter; capacitor-diode voltage multiplier; computer-aided simulations; continuous output current; electromagnetic interference; higher voltage conversion ratio; intrinsic voltage doubler characteristic; near zero input-output current ripples; semiconductors voltage stress; single ended primary inductor converter topology; single switch two diodes wide conversion ratio step down; switched mode power supplies; Computational modeling; Computer simulation; Electromagnetic interference; Inductors; Semiconductor diodes; Stress; Switches; Switching converters; Topology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sustainable Energy Technologies, 2008. ICSET 2008. IEEE International Conference on
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-1887-9
  • Electronic_ISBN
    978-1-4244-1888-6
  • Type

    conf

  • DOI
    10.1109/ICSET.2008.4747046
  • Filename
    4747046