Title :
Hot-carrier effect in ultra-thin-film (UTF) fully-depleted SOI MOSFETs
Author :
Bin Yu ; Zhi-Jian Ma ; Zhang, G. ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A systematic study was carried out on the hot-carrier (HC) effect in UTF FD SOI MOSFETs. It clarifies experimentally that even for very thin-film devices, the HC-induced damage is locally confined to the gate-oxide and only minor interface trap generation is caused on the BOX under front-channel stress. The BOX HC charging contributes less than 5% of the overall current degradation.
Keywords :
MOSFET; hot carriers; silicon-on-insulator; thin film transistors; BOX; current degradation; damage; front-channel stress; gate oxide; hot-carrier effect; interface traps; ultra-thin-film fully-depleted SOI MOSFET; Current measurement; Degradation; Electrostatic measurements; Hot carrier effects; Hot carrier injection; Hot carriers; Implants; MOSFET circuits; Pulse measurements; Stress measurement;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546300
