Title :
Electrical properties and detection methods for CMOS IC defects
Author :
Soden, Jerry M. ; Hawkins, Charles F.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
Abstract :
CMOS failure modes and mechanisms and the test vector and parametric test requirements for the detection are reviewed. The CMOS stuck-open fault is discussed from a physical viewpoint, with results given from failure analysis of ICs having this failure mode. The results show that among functional, stuck-at, stuck-open, and IDDQ test strategies, no single method guarantees detection of all types of CMOS defects. The IDDQ test is the most sensitive and comprehensive, but can miss certain open-circuit defects and is a relatively slow measurement technique. The test-vector approach detects fewer of the CMOS defects, but can run at fast clock rates to detect certain open-circuit faults that may not be detectable by the I DDQ test. Maximal CMOS IC defect detection involves a mixed-mode strategy of IDDQ tests and vector stimulus/response tests
Keywords :
CMOS integrated circuits; fault location; integrated circuit testing; integrated logic circuits; logic testing; production testing; CMOS IC defects; CMOS failure modes; IDDQ test; failure analysis; fault location; functional testing; logic testing; mixed-mode strategy; open-circuit defects; parametric test; production testing; short circuit defects; stuck-open fault; test vector; test-vector; vector stimulus/response tests; Automatic testing; CMOS integrated circuits; CMOS logic circuits; Circuit faults; Circuit testing; Degradation; Failure analysis; Integrated circuit testing; Logic testing; Production;
Conference_Titel :
European Test Conference, 1989., Proceedings of the 1st
Conference_Location :
Paris
Print_ISBN :
0-8186-1937-6
DOI :
10.1109/ETC.1989.36238
