Title :
Self-aligned thin emitter C-doped base InP/InGaAs/InP DHBT´s for high speed digital and microwave IC applications
Author :
Malik, R.J. ; Hamm, R.A. ; Kopf, R.F. ; Ryan, R.W. ; Montgomery, R.K. ; Lin, J. ; Humphrey, D.A. ; Tate, A. ; Chen, Y.K.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
Abstract :
Summary form only given. We have developed a new self-aligned thin emitter HBT process technology to fabricate high performance InP/InGaAs/InP DHBTs for digital and microwave IC applications. The epistructure which is grown by MOMBE features a C-doped base using a CBr/sub 4/ gas dopant source for stable device operation at high emitter current densities. The process technology uses combined ECR-RIE and wet etching and incorporates self-aligned emitter-base metallizations and spin-on-glass dielectric passivation. The 0.5 /spl mu/m InP collector structure results in much improved common emitter I-V characteristics (compared to InGaAs collectors) with low output conductance and high collector breakdown voltages (8-10 V). The insertion of thin n-doped 30 nm InGaAsP quaternary layers between the InP collector and InGaAs base allows high current density operation (J/sub c/=100 kA/cm/sup 2/) of the DHBT without current blocking. The use of a chirped InP/InGaAs superlattice emitter structure reduces the V/sub be/ of the devices with ideality factors very close to n=1.00. On-wafer s-parameter measurements demonstrated peak values (@J/sub c/=80 kA/cm/sup 2/, V/sub be/=2 V) of f/sub t/=100 GHz and f/sub max/=60 GHz for 2.4/spl times/9.4 /spl mu/m/sup 2/ transistors.
Keywords :
S-parameters; bipolar MMIC; carbon; characteristics measurement; etching; heterojunction bipolar transistors; integrated circuit measurement; integrated circuit technology; microwave bipolar transistors; molecular beam epitaxial growth; passivation; semiconductor epitaxial layers; semiconductor growth; semiconductor superlattices; 0.5 micron; 100 GHz; 2 V; 30 nm; 60 GHz; 8 to 10 V; DHBT; ECR-RIE; HBT process technology; InP-InGaAs:C-InP; MOMBE; collector breakdown voltages; common emitter I-V characteristics; emitter current densities; epistructure; ideality factors; microwave IC applications; output conductance; process technology; quaternary layers; s-parameter measurements; self-aligned thin emitter transistors; spin-on-glass dielectric passivation; superlattice emitter structure; wet etching; Application specific integrated circuits; Current density; Digital integrated circuits; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Microwave devices; Microwave integrated circuits; Microwave technology;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546307
