Title :
Memristor-based IMPLY logic design procedure
Author :
Kvatinsky, Shahar ; Kolodny, Avinoam ; Weiser, Uri C. ; Friedman, Eby G.
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
Memristors can be used as logic gates. No design methodology exists, however, for memristor-based combinatorial logic. In this paper, the design and behavior of a memristive-based logic gate - an IMPLY gate - are presented and design issues such as the tradeoff between speed (fast write times) and correct logic behavior are described, as part of an overall design methodology. A memristor model is described for determining the write time and state drift. It is shown that the widely used memristor model - a linear ion drift memristor - is impractical for characterizing an IMPLY logic gate, and a different memristor model is necessary such as a memristor with a current threshold.
Keywords :
combinational circuits; logic design; logic gates; memristors; linear ion drift memristor; memristor-based IMPLY logic gate design procedure; memristor-based combinatorial logic; Computational modeling; Integrated circuit modeling; Logic gates; Memristors; Resistance; Switches; Threshold voltage; IMPLY; design methodology; logic; memristive systems; memristor;
Conference_Titel :
Computer Design (ICCD), 2011 IEEE 29th International Conference on
Conference_Location :
Amherst, MA
Print_ISBN :
978-1-4577-1953-0
DOI :
10.1109/ICCD.2011.6081389