Title :
Very high power S-band SiGe heterojunction bipolar transistors
Author :
Hobart, K.D. ; Kub, F.J. ; Thompson, P.E. ; Potyraj, P.A. ; Petrosky, K.J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Summary form only given. Due to the progress of epitaxial base technology, Si/SiGe heterojunction bipolar transistors (HBTs) have continually out-performed their Si counterparts. In this work, the precept is again affirmed by the demonstration of very high power SiGe S-band HBTs. Large-area Si/SiGe HBTs were fabricated using a self-aligned polysilicon emitter process and SiGe molecular beam epitaxy (MBE). Under pulsed conditions, the HBTs exhibited a peak power and collector efficiency of 230 W and 450%, at 2.8 GHz. This result, for what is believed to be the largest HBT to date, exceeds the performance of the best Si S-band transistor by 30%.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; molecular beam epitaxial growth; power bipolar transistors; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon; 2.8 GHz; 230 W; 45 percent; S-band; Si-SiGe; collector efficiency; epitaxial base technology; high power heterojunction bipolar transistors; molecular beam epitaxy; peak power; pulsed conditions; self-aligned polysilicon emitter; Annealing; Conductivity; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Packaging; Radio frequency; Silicon germanium; Testing; Voltage;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546308
