Very high power S-band SiGe heterojunction bipolar transistors

Author

Hobart, K.D. ; Kub, F.J. ; Thompson, P.E. ; Potyraj, P.A. ; Petrosky, K.J.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1996

fDate

26-26 June 1996

Firstpage

42

Lastpage

43

Abstract

Summary form only given. Due to the progress of epitaxial base technology, Si/SiGe heterojunction bipolar transistors (HBTs) have continually out-performed their Si counterparts. In this work, the precept is again affirmed by the demonstration of very high power SiGe S-band HBTs. Large-area Si/SiGe HBTs were fabricated using a self-aligned polysilicon emitter process and SiGe molecular beam epitaxy (MBE). Under pulsed conditions, the HBTs exhibited a peak power and collector efficiency of 230 W and 450%, at 2.8 GHz. This result, for what is believed to be the largest HBT to date, exceeds the performance of the best Si S-band transistor by 30%.

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; molecular beam epitaxial growth; power bipolar transistors; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon; 2.8 GHz; 230 W; 45 percent; S-band; Si-SiGe; collector efficiency; epitaxial base technology; high power heterojunction bipolar transistors; molecular beam epitaxy; peak power; pulsed conditions; self-aligned polysilicon emitter; Annealing; Conductivity; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Packaging; Radio frequency; Silicon germanium; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1996. Digest. 54th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-3358-6

Type

conf

DOI

10.1109/DRC.1996.546308

Filename

546308