1/f noise in electron devices due to temperature fluctuations in heat condition

It is shown that power dissipation in electron devices will result in temperature fluctuations which are frequency dependent and consequently l/f noise. As an example, application of this theory to diode and laser diodes with significant power dissipation is considered. The latter are of interest since it has been previously reported that the spectral intensity of the l/f noise varies linearly with the applied DC current and not as is usual in most electron devices as the square of the DC voltage or current as described by Hooge´s empirical relationship. We will show results on a simple diode where the mean square noise voltage at low frequency varies linearly with the applied DC current. The results have also been applied to describe measurements on resistive filaments in vacuum such as in light bulbs or vacuum tube devices where there is significant power dissipation and heat conduction. Temperature fluctuations in heat conduction result in l/f fluctuations in resistance of the filament. These results might well do much to clarify the long lack of understanding of l/f noise in vacuum tube devices.