Title :
High performance active gate drive for high power IGBTs
Author :
John, Vinod ; Suh, Bum-Seok ; Lip, Thomas A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
This paper deals with an active gate drive (AGD) technology for high power IGBTs. It is based on an optimal combination of several requirements necessary for good switching performance under hard switching conditions. The scheme specifically combines together the slow drive requirements for low noise and switching stress and the fast drive requirements for high speed switching and low switching energy loss. The gate drive can also effectively dampen oscillations during low current turn-on transients in the IGBT. This paper looks at the conflicting requirements of the conventional gate drive circuit design and demonstrates, using experimental results, that the proposed three-stage active gate drive technique can be an effective solution.
Keywords :
driver circuits; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power semiconductor switches; switching; active gate drive technology; fast drive requirements; hard switching conditions; high-power IGBTs; high-speed switching; low current turn-on transients; noise; oscillations damping; slow drive requirements; switching energy loss; switching performance; switching stress; three-stage active gate drive technique; Circuit noise; Delay; Energy loss; Insulated gate bipolar transistors; Power semiconductor switches; Resistors; Semiconductor device noise; Stress; Switching circuits; Switching loss;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.730343
