Interface degradation and dielectric breakdown of thin oxides due to homogeneous charge injection

Author

Kerber, M. ; Schwalke, U.

Author_Institution

Siemens AG, Munich, West Germany

fYear

1989

fDate

11-13 Apr 1989

Firstpage

17

Lastpage

21

Abstract

The interface stability of 9- to 20-nm gate oxides is evaluated during homogeneous charge injection. In addition, the question of the extent to which interface degradation is correlated to dielectric breakdown is addressed. The measurements reveal that thinner oxides are more resistant to interface degradation. In addition, significantly reduced charge trapping in thin oxides results in improved threshold voltage stability. For both gate polarities, oxide breakdown exhibits no direct correlation to interface state density

Keywords

electric breakdown of solids; elemental semiconductors; interface electron states; semiconductor-insulator boundaries; silicon; silicon compounds; 9 to 20 nm; Si-SiO₂; charge trapping; dielectric breakdown; gate polarities; homogeneous charge injection; interface degradation; interface stability; interface state density; thin oxides; threshold voltage stability; Annealing; Capacitors; Degradation; Dielectric breakdown; Electric breakdown; Electron traps; Interface states; Oxidation; Stability; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1989. 27th Annual Proceedings., International

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/RELPHY.1989.36311

Filename

36311