• DocumentCode
    2344557
  • Title

    Interface state generation due to electron tunneling into thin oxides

  • Author

    Ozawa, Yoshio ; Iwase, Masao ; Toriumi, Akira

  • Author_Institution
    Toshiba Corp., Kawasaki, Japan
  • fYear
    1989
  • fDate
    11-13 Apr 1989
  • Firstpage
    22
  • Lastpage
    27
  • Abstract
    An investigation of interface state generation due to tunneling current injection into gate oxides for various oxide thicknesses is discussed. The experimental results provide strong evidence that interface state generation is triggered by holes passing through the Si/SiO2 interface, even in electron injection. Another degradation mode also exists in ultrathin oxides (about 5 nm) where the voltage applied across the oxide is lower than 6.8 V
  • Keywords
    elemental semiconductors; interface electron states; semiconductor-insulator boundaries; silicon; silicon compounds; tunnelling; Si-SiO2 interface; electron injection; electron tunneling; holes; interface state generation; oxide thicknesses; thin oxides; tunneling current injection; ultrathin oxides; Charge pumps; Current measurement; Degradation; Density measurement; Electrons; Interface states; Pulse measurements; Semiconductor device modeling; Tunneling; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
  • Conference_Location
    Phoenix, AZ
  • Type

    conf

  • DOI
    10.1109/RELPHY.1989.36312
  • Filename
    36312
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2344557