DocumentCode
2344587
Title
Effect of mechanical stress for thin SiO2 films in TDDB and CCST characteristics
Author
Ohno, Y. ; Ohsaki, A. ; Kaneoka, T. ; Mitsuhashi, J. ; Hirayama, M. ; Kato, T.
Author_Institution
Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1989
fDate
11-13 Apr 1989
Firstpage
34
Lastpage
38
Abstract
The effects of mechanical stress for thin SiO2 films in TDDB (time-dependent dielectric breakdown) and CCST (constant-current stress test) are discussed. Compressive stress induced by a WSi2 layer enhances generation of native traps induced by electron injection and degrades the CCST characteristics of MOS capacitors. In TDDB characteristics, the compressive stress decreases the intrinsic lifetime for thin SiO2 films. The tensile stress induced by the plasma SiO layer does not degrade the CCST characteristics. The generation of interface states by electron injection is enhanced on the MOS capacitors by the tensile stress. The mechanical stress degrades the reliability of MOS capacitors with thin SiO2 films
Keywords
dielectric thin films; electric breakdown of solids; interface electron states; internal stresses; life testing; metal-insulator-semiconductor structures; reliability; MOS capacitors; WSi2 layer; compressive stress; constant-current stress test; electron injection; interface states; intrinsic lifetime; mechanical stress; native traps; plasma SiO layer; reliability; tensile stress; thin SiO2 films; time-dependent dielectric breakdown; Character generation; Compressive stress; Degradation; Dielectric breakdown; Dielectric thin films; Electron traps; MOS capacitors; Plasma properties; Tensile stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location
Phoenix, AZ
Type
conf
DOI
10.1109/RELPHY.1989.36314
Filename
36314
Link To Document