Title :
New applications of focused ion beam technique to failure analysis and process monitoring of VLSI
Author :
Nikawa, K. ; Nasu, K. ; Murase, M. ; Kaito, T. ; Adachi, T. ; Inoue, S.
Author_Institution :
NEC Corp., Kanagawa, Japan
Abstract :
The applications presented are: (1) microscopic selective cross-sectioning and in situ observation of the cross section; and (2) the observation of aluminum microstructure. These applications make failure analysis techniques simpler and less time-consuming
Keywords :
VLSI; failure analysis; integrated circuit testing; ion beam applications; metallisation; Al microstructure; VLSI; failure analysis; focused ion beam technique; in situ cross section observation; microscopic selective cross-sectioning; process monitoring; Apertures; Application software; Computerized monitoring; Condition monitoring; Conductive films; Etching; Failure analysis; Ion beams; Microscopy; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/RELPHY.1989.36316
