A fully planarized, 6H-SiC UMOS insulated-gate bipolar transistor

Silicon carbide is one of the wide bandgap semiconductors that have been projected to have much better performance than silicon for high-voltage power applications. Properties such as high electric breakdown field, high thermal conductivity, large saturated electron drift velocity also makes it a material of choice for high temperature operation. High-temperature environments, such as turbine engines and propulsion systems, require power switches with very low leakage currents in the off-state and low forward drop in the on-state. Previously, a analytical design analysis of 500-3000 V 6H-SiC power UMOSFET has been reported. In this paper, the experimental demonstration of a 6H-SiC UMOS IGBT, which was fabricated using a fully planarized process, is shown for the first time. Its electrical performance over a wide range of temperature (25-300/spl deg/C) is characterized and compared to a 6H-SiC UMOS power FET of the same design and process.