Title :
A new reliability problem associated with Ar ion sputter cleaning of interconnect vias
Author :
Tomioka, Hideki ; Tanabe, Shin-ichi ; Mizukami, Koichiro
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
The cleanliness of a sputter-etched surface of an aluminum alloy in interconnect vias has been investigated. In situ Auger analysis of the sputter-etched vias indicates that sputter-etch cleaning prior to metallization removes the natural oxide on the aluminum surface, but leaves a thin insulating layer due to redeposition of the atoms sputtered out of the intermetal dielectric. Existence of the redeposited layer was also confirmed by scanning electron microscopy (SEM) cross-sectional observation of the vias. The redeposited insulating layer causes contact failure of vias during life testing including high-temperature storage and operation. A multipinhole contact model is proposed to explain the failure mechanism
Keywords :
Auger effect; aluminium alloys; failure analysis; metallisation; reliability; scanning electron microscope examination of materials; silicon alloys; sputter etching; AlSi; Ar ion sputter cleaning; Auger analysis; SEM; contact failure; failure mechanism; high-temperature storage; interconnect vias; intermetal dielectric; life testing; metallization; multipinhole contact model; reliability; sputter-etch cleaning; sputtered atom redeposition; thin insulating layer; Aluminum; Argon; Cleaning; Dielectric substrates; Electron beams; Ion beams; Metallization; Silicon; Spectroscopy; Sputter etching;
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/RELPHY.1989.36317