Title :
An investigation of the time dependence of current degradation in MOS devices
Author :
Rakkhit, R. ; Peckerar, M.C. ; Yao, C.T.
Author_Institution :
Adv. Micro Devices, Sunnyvale, CA, USA
Abstract :
A perturbation technique is used to solve the time-dependent transport equations, giving an accurate picture of the time dependence of hot-carrier-induced degradation in submicrometer MOS devices. The growth of the spatial distribution of both the interface-generated traps and the oxide-trapped charges are incorporated in a two-dimensional model using the effective electron temperature calculations. The calculations and the measurements show a self-limiting behavior of the degradation process
Keywords :
hot carriers; insulated gate field effect transistors; interface electron states; perturbation techniques; semiconductor device models; semiconductor device testing; MOSFET; current degradation; effective electron temperature; hot-carrier-induced degradation; interface-generated traps; oxide-trapped charges; perturbation technique; self-limiting behavior; submicrometer MOS devices; time dependence; time-dependent transport equations; two-dimensional model; Charge measurement; Current density; Current measurement; Degradation; Electron traps; Equations; Hot carriers; MOS devices; Stress; Temperature distribution;
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/RELPHY.1989.36329
