Title :
Hot-carrier-induced latchup and trapping/detrapping phenomena
Author :
Wang, C.M. ; Tzou, J.J. ; Yang, C.Y.
Author_Institution :
Microelectron. Lab., Santa Clara Univ., CA, USA
Abstract :
Two phenomena due to hot carriers in CMOS are investigated. One is latchup induced by high drain voltage. The results show that the triggering drain voltage decreases with decreasing channel length. The other is detrapping of trapped carriers during a relax cycle subsequent to DC voltage stressing. The results show that the degradation and recovery kinetics follow similar power laws and correspond to carrier trapping and detrapping, respectively
Keywords :
CMOS integrated circuits; electron traps; hot carriers; insulated gate field effect transistors; integrated circuit testing; CMOS; DC voltage stressing; channel length; high drain voltage; hot carrier induced latchup; recovery kinetics; relax cycle; trapped carrier detrapping; trapping/detrapping phenomena; triggering drain voltage; CMOS technology; Degradation; Hot carriers; Kinetic theory; Laboratories; MOSFET circuits; Microelectronics; Space technology; Switches; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/RELPHY.1989.36330
