Title :
Improved EPROM moisture performance using spin-on-glass (SOG) for passivation planarization
Author :
Gaeta, Isaura S. ; Wu, Ken J.
Author_Institution :
Intel. Corp., Santa Clara, CA, USA
Abstract :
Plastic-encapsulated EPROM (erasable programmable read-only memory) moisture reliability is contingent on good passivation integrity. Step coverage of passivation becomes an issue when array metal pitch is reduced in high-density EPROMs. Planarizing the passivation with an intermediate spin-on-glass layer is shown to reduce the long-term stress failure rate by a factor of three and thus to improve EPROM performance in moisture
Keywords :
EPROM; MOS integrated circuits; circuit reliability; environmental testing; failure analysis; integrated circuit technology; integrated memory circuits; passivation; EPROM moisture performance; NMOS technology; array metal pitch; long-term stress failure rate; moisture reliability; passivation planarization; spin-on-glass; step coverage; Degradation; Dielectrics; EPROM; Moisture; Nonvolatile memory; Passivation; Planarization; Plastics; Stress; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/RELPHY.1989.36332
