Title :
Differentially-shielded monolithic inductors
Author :
Cheung, Tak Shun D ; Long, John R. ; Vaed, K. ; Volant, R. ; Chinthakindi, A. ; Schnabel, C.M. ; Florkey, J. ; He, Z.X. ; Stein, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
Differential shielding reduces substrate losses and improves the Q-factor of a monolithic inductor on silicon by up to 35% without process modification or a patterned ground shield. Peak Qs of 32 for 4 μm thick aluminum and 28 for 2.3 μm thick copper metals are demonstrated on 10 Ω-cm substrates for a 7.7 nH test inductor. The differential shield fulfills all existing metal density requirements, and a compact circuit model is presented that agrees within 8% of measurement.
Keywords :
Q-factor; aluminium; copper; inductors; shielding; 2.3 micron; 4 micron; Al; Cu; Q-factor; differential shielding; differentially-shielded monolithic inductors; metal density requirements; silicon monolithic inductor; substrate losses; Conductivity; Fingers; Impedance; Inductance; Inductors; Q factor; Radio frequency; Silicon; Strips; Substrates;
Conference_Titel :
Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
Print_ISBN :
0-7803-7842-3
DOI :
10.1109/CICC.2003.1249367
