DocumentCode :
2344939
Title :
A reliability study of Au-Sn eutectic binding with Ga-As dice
Author :
Matijasevic, Goran S. ; Lee, Chin C.
Author_Institution :
Dept. of Electr. Eng., California Univ., CA, USA
fYear :
1989
fDate :
11-13 Apr 1989
Firstpage :
137
Lastpage :
140
Abstract :
GaAs test dice successfully bonded on alumina substrates using Au-Sn eutectic alloy with static pressure but without scrubbing are discussed. A scanning acoustic microscope (SAM) having a spatial resolution of 25 μm was used to examine the quality of the bondings. Nearly perfect bondings have been achieved consistently. After 100 cycles of thermal shock between -196° and +160°C, good specimens remain well bonded without die cracking, as confirmed by the SAM images. Specimens with voids near the edge of the dice incur vertical die cracking due to the concentrated stress at the voids. Shear tests have also been performed and 95% of the specimens tested passed the MIL-STD-883C test. The resulting shear strength correlates perfectly with the quality of the bondings determined by the SAM images
Keywords :
III-V semiconductors; acoustic microscopy; eutectic alloys; gallium arsenide; gold alloys; mechanical testing; microassembling; reliability; thermal stress cracking; tin alloys; -196 to 160 degC; Al2O3 substrate; Au-Sn eutectic binding; GaAs test dice; GaAs-AuSn; MIL-STD-883C test; SAM images; bonding quality; concentrated stress; reliability; scanning acoustic microscope; shear strength; shear tests; static pressure; thermal shock cycles; vertical die cracking; voids; Bonding; Frequency; Gallium arsenide; Image analysis; Microassembly; Microscopy; Signal analysis; Signal processing; Spatial resolution; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/RELPHY.1989.36335
Filename :
36335
Link To Document :
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