Title :
Reliability aspects of laser programmable redundancy: infrared vs. green, polysilicon vs. silicide
Author :
Chlipala, J.D. ; Scarfone, L.M.
Author_Institution :
AT&T Bell Lab., Allentown, PA, USA
Abstract :
The laser explosion of memory redundancy target links has been simulated and temperature evolution profiles produced. The subsequent analysis suggests the following order starting with the most reliable: (1) polysilicon links with infrared laser; (2a) polysilicon links with green laser; (2b) silicide-polysilicon links with infrared laser; and (3) silicide-polysilicon links with green laser. Lower-melting point silicide (e.g. TiSi2) is shown to hold some advantage over high-melting-point silicide (e.g. TaSi2) as a target material. This advantage, however, is not enough to elevate it over polysilicon links in the reliability rank order
Keywords :
integrated circuit technology; integrated memory circuits; laser beam applications; redundancy; reliability; temperature distribution; DRAM; TaSi2; TiSi2; green laser; infrared laser; laser explosion; laser programmable redundancy; memory redundancy target links; polysilicon links; reliability; silicide-polysilicon links; temperature evolution profiles; Absorption; Explosions; Laser modes; Laser theory; Materials reliability; Optical materials; Redundancy; Silicides; Silicon; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
DOI :
10.1109/RELPHY.1989.36339