DocumentCode :
2345023
Title :
Fatigue mechanisms in thin film potassium nitrate memory devices
Author :
Kulkarni, A.K. ; Rohrer, G.A. ; McMillan, L.D. ; Adams, S.E.
Author_Institution :
Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA
fYear :
1989
fDate :
11-13 Apr 1989
Firstpage :
171
Lastpage :
177
Abstract :
The terminal fatigue characteristics of vacuum deposited phase-III potassium nitrate (KNO3-III) ferroelectric memory devices are reported. It is concluded that the decrease in the polarization values after several million read/write cycles is probably due to the interfacial degradation at the gold/KNO3 interface observed by Auger electron-spectroscopy techniques
Keywords :
Auger effect; dielectric polarisation; digital storage; fatigue testing; ferroelectric devices; ferroelectric thin films; potassium compounds; thin film devices; vacuum deposited coatings; Auger electron-spectroscopy; KNO3-Au; ferroelectric memory; interfacial degradation; phase-III; polarization; read/write cycles; terminal fatigue characteristics; vacuum deposited thin film; Capacitance; Degradation; Fatigue; Ferroelectric materials; Gold; Polarization; Testing; Thin film devices; Vacuum technology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/RELPHY.1989.36340
Filename :
36340
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2345023
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