• DocumentCode
    2345023
  • Title

    Fatigue mechanisms in thin film potassium nitrate memory devices

  • Author

    Kulkarni, A.K. ; Rohrer, G.A. ; McMillan, L.D. ; Adams, S.E.

  • Author_Institution
    Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA
  • fYear
    1989
  • fDate
    11-13 Apr 1989
  • Firstpage
    171
  • Lastpage
    177
  • Abstract
    The terminal fatigue characteristics of vacuum deposited phase-III potassium nitrate (KNO3-III) ferroelectric memory devices are reported. It is concluded that the decrease in the polarization values after several million read/write cycles is probably due to the interfacial degradation at the gold/KNO3 interface observed by Auger electron-spectroscopy techniques
  • Keywords
    Auger effect; dielectric polarisation; digital storage; fatigue testing; ferroelectric devices; ferroelectric thin films; potassium compounds; thin film devices; vacuum deposited coatings; Auger electron-spectroscopy; KNO3-Au; ferroelectric memory; interfacial degradation; phase-III; polarization; read/write cycles; terminal fatigue characteristics; vacuum deposited thin film; Capacitance; Degradation; Fatigue; Ferroelectric materials; Gold; Polarization; Testing; Thin film devices; Vacuum technology; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1989. 27th Annual Proceedings., International
  • Conference_Location
    Phoenix, AZ
  • Type

    conf

  • DOI
    10.1109/RELPHY.1989.36340
  • Filename
    36340
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2345023