DocumentCode
2345031
Title
GaN HFETs and MODFETs with very high breakdown voltage and large transconductance
Author
Wu, Y.-F. ; Keller, B.P. ; Keller, S. ; Kapolnek, D. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1996
fDate
26-26 June 1996
Firstpage
60
Lastpage
61
Abstract
We have successfully fabricated GaN HFETs and MODFETs with very high breakdown voltage and large transconductance. In particular, a gate-drain breakdown voltage well exceeding 100 V, g/sub m/ up to 120 mS/mm, channel current density >300 mA/mm were realized in the same MODFET. These performances are attributed to the good crystal quality film close the substrate.
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; junction gate field effect transistors; wide band gap semiconductors; 100 V; GaN; HFET; MODFET; channel current density; crystal quality film; fabrication; gate-drain breakdown voltage; transconductance; Contact resistance; Electrons; Gallium nitride; HEMTs; Leakage current; MODFETs; Ohmic contacts; Semiconductor diodes; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location
Santa Barbara, CA, USA
Print_ISBN
0-7803-3358-6
Type
conf
DOI
10.1109/DRC.1996.546315
Filename
546315
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