Title :
A 4-91 GHz distributed amplifier in a standard 0.12 μm SOI CMOS microprocessor technology
Author :
Plouchart, Jean-Olivier ; Kim, Jonghae ; Zamdmer, Noah ; Lu, Liang-Hung ; Sherony, Melanie ; Tan, Yue ; Groves, Robert ; Trzcinski, Robert ; Talbi, Mohamed ; Ray, Asit ; Wagner, Lawrence
Author_Institution :
Dev. Center, IBM Semicond. Res., Hopewell Junction, NY, USA
Abstract :
This paper presents five-stage and seven-stage distributed amplifiers (DA) in a 0.12 μm SOI CMOS technology. The five-stage DA has a 4 to 91 GHz bandpass frequency with a gain of 5 dB. The seven-stage DA has a 5 to 86 GHz bandpass frequency with a gain of 9 dB. The power consumption is 90 and 130 mW for the 5-stage and 7-stage respectively at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm2 for the 5-stage and 7-stage respectively.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; distributed amplifiers; integrated circuit design; millimetre wave amplifiers; silicon-on-insulator; 0.12 micron; 130 mW; 2.6 V; 4 to 91 GHz; 5 dB; 5 to 86 GHz; 9 dB; 90 mW; CMOS microprocessor technology; SOI; Si-SiO2; bandpass frequency gain; microwave amplifier; mm-wave distributed amplifier; multi-stage DA; Bandwidth; CMOS technology; Cutoff frequency; Dielectric substrates; Distributed amplifiers; Distributed parameter circuits; Gain; MIM capacitors; Microprocessors; Silicon;
Conference_Titel :
Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
Print_ISBN :
0-7803-7842-3
DOI :
10.1109/CICC.2003.1249382
