The mixed mode 4H-SiC SIT as an S-band microwave power transistor

Author

Clarke, R.C. ; Agarwal, A.K. ; Siergiej, R.R. ; Brandt, C.D. ; Morse, A.W.

Author_Institution

Northrop Grummaan Sci. & Technol. Center, Pittsburgh, PA, USA

fYear

1996

fDate

26-26 June 1996

Firstpage

62

Lastpage

63

Abstract

Summary form only given. For the first time, mixed mode 4H-SiC SIT (Static Induction Transistor) devices have been operated for power generation at S-band frequencies. This paper discusses why the SIT is an excellent choice for microwave power transistors in SiC, the technology for SIT fabrication and packaging, and the performance of the first 3.0 GHz SiC power SITs.

Keywords

microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device packaging; silicon compounds; static induction transistors; wide band gap semiconductors; 3 GHz; 4H-SiC SIT; S-band frequencies; SHF; SiC; fabrication technology; microwave SIT; microwave power transistor; mixed mode SIT; packaging; power generation; static induction transistor; Electromagnetic heating; Frequency response; MESFETs; Microwave FETs; Microwave devices; Power generation; Power transistors; Radio frequency; Silicon carbide; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 1996. Digest. 54th Annual

Conference_Location

Santa Barbara, CA, USA

Print_ISBN

0-7803-3358-6

Type

conf

DOI

10.1109/DRC.1996.546316

Filename

546316