Title :
The mixed mode 4H-SiC SIT as an S-band microwave power transistor
Author :
Clarke, R.C. ; Agarwal, A.K. ; Siergiej, R.R. ; Brandt, C.D. ; Morse, A.W.
Author_Institution :
Northrop Grummaan Sci. & Technol. Center, Pittsburgh, PA, USA
Abstract :
Summary form only given. For the first time, mixed mode 4H-SiC SIT (Static Induction Transistor) devices have been operated for power generation at S-band frequencies. This paper discusses why the SIT is an excellent choice for microwave power transistors in SiC, the technology for SIT fabrication and packaging, and the performance of the first 3.0 GHz SiC power SITs.
Keywords :
microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device packaging; silicon compounds; static induction transistors; wide band gap semiconductors; 3 GHz; 4H-SiC SIT; S-band frequencies; SHF; SiC; fabrication technology; microwave SIT; microwave power transistor; mixed mode SIT; packaging; power generation; static induction transistor; Electromagnetic heating; Frequency response; MESFETs; Microwave FETs; Microwave devices; Power generation; Power transistors; Radio frequency; Silicon carbide; Voltage;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546316
