Title :
A C-V examination of the electrically reversible depassivation/passivation mechanism in polycrystalline silicon
Author :
Suntharalingam, V. ; Fonash, S.J.
Author_Institution :
Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA
Abstract :
Recently, we reported the first observations of an electrically reversible depassivation/passivation phenomenon in hydrogen passivated polycrystalline silicon and presented a model for it based on hydrogen release and drift. Here we show our latest finding obtained in studying the depassivation/passivation phenomenon for an RF-hydrogenated polycrystalline silicon n-channel TFT using high frequency capacitance-voltage characterization.
Keywords :
capacitance; elemental semiconductors; passivation; semiconductor technology; silicon; thin film transistors; RF hydrogenation; Si; depassivation; high frequency capacitance-voltage characteristics; n-channel TFT; passivation; polycrystalline silicon; Capacitance; Capacitance-voltage characteristics; Crystallization; Hydrogen; Passivation; Silicon; Stress; Switches; Thin film transistors; Voltage;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546320
