Wavelength control through lateral device size in a 2/spl times/2 vertical-cavity surface-emitting laser array fabricated using selective oxidation

To our knowledge, this is the first demonstration of the lasing wavelength control of a VCSEL through its lateral size, and is made possible with the index-guiding due to the selective oxidation. Because the selective oxidation provides an electrical insulator for device isolation, the technique is readily extended to larger scale processing, even denser device packing, and, depending on required wavelength separations, more elements. Further characterization data of far-field radiation patterns, thermal impedances, and electrical impedances, as well as processing details will be presented.