DocumentCode
2345800
Title
SiGe BiCMOS technology for communication products
Author
Racanelli, Marco ; Kempf, Paul
Author_Institution
Jazz Semicond., Newport Beach, CA, USA
fYear
2003
fDate
21-24 Sept. 2003
Firstpage
331
Lastpage
334
Abstract
SiGe BiCMOS technology is reviewed with focus on recent advances including the achievement of >200 GHz Ft and Fmax SiGe transistors, integration with generic 0.13 μm CMOS, and the realization of low-cost nodes for the integration of wireless transceivers. Record-breaking wireless and wire-line circuit examples are also provided.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; MIMIC; millimetre wave bipolar transistors; semiconductor materials; semiconductor technology; telecommunication equipment; transceivers; 0.13 micron; 200 GHz; CMOS; SiGe; SiGe BiCMOS technology; SiGe bipolar transistors; communication products; low-cost wireless transceivers; wire-line communication circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Communications technology; Foundries; Germanium silicon alloys; Implants; Silicon germanium; Transceivers; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
Print_ISBN
0-7803-7842-3
Type
conf
DOI
10.1109/CICC.2003.1249413
Filename
1249413
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