DocumentCode :
2345887
Title :
1.3 /spl mu/m laser diodes with large spot size and low loss fibre-chip coupling fabricated by standard buried heterostructure laser processes
Author :
Bouadma, N. ; Ougazzaden, A. ; Kamoun, F. ; Kazmierski, C. ; Silvestre, L.
Author_Institution :
CNET, Bagneux, France
fYear :
1996
fDate :
26-26 June 1996
Firstpage :
94
Lastpage :
95
Abstract :
We present a simple expanded output mode semiconductor diode laser without spot size transformer. The laser spot size expansion is achieved by decreasing the effective refractive index step between the core and cladding. The major advantage of this approach is that the laser can be fabricated with conventional buried heterostructure technology with no inherent resolution limits and no need for additional sophisticated etching or epitaxial techniques, avoiding any significant cost increase of the laser chip. Moreover, this approach is suitable for mass production. The fabricated LDs show good lasing characteristics and low loss coupling of less than -4.3 dB into a cleaved single mode fibre with good misalignment tolerance.
Keywords :
laser beams; optical fabrication; optical fibre couplers; semiconductor lasers; -4.3 dB; 1.3 micron; buried heterostructure technology; fabrication; fibre-chip coupling; loss; misalignment tolerance; refractive index step; semiconductor diode laser; spot size; Costs; Diode lasers; Etching; Fiber lasers; Laser modes; Mass production; Refractive index; Semiconductor diodes; Semiconductor lasers; Transformer cores;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
Type :
conf
DOI :
10.1109/DRC.1996.546328
Filename :
546328
Link To Document :
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