• DocumentCode
    2345985
  • Title

    Programmable and automatically adjustable on-die terminator for DDR3-SRAM interface

  • Author

    Kim, Nam-Seog ; Yoon, Yong-Jm ; Cho, Uk-Rae ; Byun, Hyun-Gem

  • Author_Institution
    Memory Div., Samsung Electron., Kyeonggi-Do, South Korea
  • fYear
    2003
  • fDate
    21-24 Sept. 2003
  • Firstpage
    391
  • Lastpage
    394
  • Abstract
    A new programmable and automatically adjustable off-chip driver (OCD) and on-die terminator (ODT) for DDR3-SRAM interface are proposed, to widen the valid data widow. The proposed OCD fills the role of the ODT, and the OCD and the ODT play a role in the ESD protection circuit. This application of 72 Mb DDR3-SRAM provides a 1.5 GHz data rate, and the valid data window of the DDR input signal is 540 ps. The proposed programmable impedance controller (PIC) maintains constant resistance of the ODT within a 3% variation, and supports DDR3-SRAM mode. A new scheme of updating impedance control codes to maintain uniform impedance and a stable power-up sequence for the ODT are also suggested.
  • Keywords
    SRAM chips; driver circuits; electric impedance; electrostatic discharge; programmable circuits; 1.5 Gbit/s; 540 ps; 72 Mbit; DDR3-SRAM interface; ESD protection circuit; OCD; automatically adjustable terminator; constant resistance PIC; impedance control codes updating; off-chip driver; programmable impedance controller; programmable on-die terminator; stable power-up sequence; uniform impedance ODT; valid data widow widening; Capacitance; Central Processing Unit; Driver circuits; Electrostatic discharge; Energy consumption; Impedance; Power transmission lines; Protection; Random access memory; SRAM chips;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
  • Print_ISBN
    0-7803-7842-3
  • Type

    conf

  • DOI
    10.1109/CICC.2003.1249425
  • Filename
    1249425