Title :
Programmable and automatically adjustable on-die terminator for DDR3-SRAM interface
Author :
Kim, Nam-Seog ; Yoon, Yong-Jm ; Cho, Uk-Rae ; Byun, Hyun-Gem
Author_Institution :
Memory Div., Samsung Electron., Kyeonggi-Do, South Korea
Abstract :
A new programmable and automatically adjustable off-chip driver (OCD) and on-die terminator (ODT) for DDR3-SRAM interface are proposed, to widen the valid data widow. The proposed OCD fills the role of the ODT, and the OCD and the ODT play a role in the ESD protection circuit. This application of 72 Mb DDR3-SRAM provides a 1.5 GHz data rate, and the valid data window of the DDR input signal is 540 ps. The proposed programmable impedance controller (PIC) maintains constant resistance of the ODT within a 3% variation, and supports DDR3-SRAM mode. A new scheme of updating impedance control codes to maintain uniform impedance and a stable power-up sequence for the ODT are also suggested.
Keywords :
SRAM chips; driver circuits; electric impedance; electrostatic discharge; programmable circuits; 1.5 Gbit/s; 540 ps; 72 Mbit; DDR3-SRAM interface; ESD protection circuit; OCD; automatically adjustable terminator; constant resistance PIC; impedance control codes updating; off-chip driver; programmable impedance controller; programmable on-die terminator; stable power-up sequence; uniform impedance ODT; valid data widow widening; Capacitance; Central Processing Unit; Driver circuits; Electrostatic discharge; Energy consumption; Impedance; Power transmission lines; Protection; Random access memory; SRAM chips;
Conference_Titel :
Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003
Print_ISBN :
0-7803-7842-3
DOI :
10.1109/CICC.2003.1249425