Design and applications of ferroelectric nonvolatile SRAM and flip-flop with unlimited read/program cycles and stable recall

Author

Masui, Shoichi ; Yokozeki, Wataru ; Oura, Michiya ; Ninomiya, Tsuzumi ; Mukaida, Kenji ; Takayama, Yoshihisa ; Teramoto, Toshiyuki

Author_Institution

Fujitsu Labs. Ltd., Tokyo, Japan

fYear

2003

fDate

21-24 Sept. 2003

Firstpage

403

Lastpage

406

Abstract

Circuit techniques to realize unlimited program cycle operation in ferroelectric nonvolatile (NV) SRAM have been developed with conventional ferroelectric materials. Program operation is separated into volatile write operation without polarization change and nonvolatile store operation with polarization change. Biasing of the memory cell is optimized to meet reliability requirements. The developed circuit principle is extended to implement a low-power nonvolatile flip-flop applicable to long communication range radio frequency identification tag LSIs.

Keywords

SRAM chips; ferroelectric storage; flip-flops; low-power electronics; FeRAM; ferroelectric nonvolatile SRAM; long communication range RF identification tag LSI; low-power nonvolatile flip-flop; nonvolatile store operation; polarization change; stable SRAM recall; unlimited read/program cycles; volatile write operation; CMOS technology; Capacitors; Circuits; Ferroelectric films; Ferroelectric materials; Flip-flops; Nonvolatile memory; Polarization; Random access memory; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003

Print_ISBN

0-7803-7842-3

Type

conf

DOI

10.1109/CICC.2003.1249428

Filename

1249428