A 3-10 GHz LCR-matched power amplifier using flip-chip mounted AlGaN/GaN HEMTs

Author

Xu, J.J. ; Keller, S. ; Perish, G. ; Heikman, S. ; Mishra, U.K. ; York, R.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

2

fYear

2000

fDate

11-16 June 2000

Firstpage

959

Abstract

We report a GaN-based broadband power amplifier using AlGaN/GaN-HEMTs, grown on sapphire substrates, as the active devices. The circuit topology used novel LCR-matching networks in a 4-way binary-Wilkinson combiner structure. The devices were flip-chip bonded onto the AlN circuit for thermal management. Using devices with 0.7-/spl mu/m gate length and 4-mm gate width, a small-signal gain of 7 dB was obtained with 3-10 GHz bandwidth. The saturation power level was 8.5 W at 8 GHz, which is the highest for a power amplifier using GaN-HEMTs-on-Sapphire.

Keywords

HEMT circuits; III-V semiconductors; aluminium compounds; flip-chip devices; gallium compounds; impedance matching; microwave power amplifiers; thermal management (packaging); wideband amplifiers; 0.7 micron; 3 to 10 GHz; 7 dB; 8.5 W; AlGaN-GaN; AlGaN/GaN HEMT; LCR matching network; active device; binary Wilkinson combiner; broadband power amplifier; circuit topology; flip-chip mounting; sapphire substrate; thermal management; Aluminum gallium nitride; Bandwidth; Broadband amplifiers; Circuits; Gallium nitride; HEMTs; Impedance matching; MODFETs; Power amplifiers; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.863516

Filename

863516