Title :
State-of-the-art in defect control of bulk SiC
Author :
Bakin, A.S. ; Dorozhkin, S.I.
Author_Institution :
Dept. of Microelectron., St Petersburg Electrotech. Univ., Russia
Abstract :
The authors´ previous and recent studies of defect formation under SiC sublimation growth and of the influence of the sublimation growth conditions on the polytype control and defect formation in 6H-and 4H-SiC crystals and layers have been analyzed and discussed
Keywords :
crystal defects; crystal growth from vapour; semiconductor growth; silicon compounds; sublimation; wide band gap semiconductors; 4H-SiC crystals; 6H-SiC crystals; SiC; SiC layers; SiC sublimation growth; bulk SiC; defect control; defect formation; polytype control; sublimation growth conditions; Aerospace electronics; Consumer electronics; Crystalline materials; Gallium nitride; Power electronics; Radiation hardening; Silicon carbide; Substrates; Temperature distribution; Temperature sensors;
Conference_Titel :
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-4437-5
DOI :
10.1109/HTEMDS.1998.730635
