DocumentCode
234612
Title
New non-destructive Read/Write circuit for Memristor-based memories
Author
Elshamy, Mohamed ; Mostafa, Hassan ; Said, M. Sameh
Author_Institution
Electron. & Commun. Eng. Dept., Cairo Univ., Cairo, Egypt
fYear
2014
fDate
19-20 April 2014
Firstpage
1
Lastpage
5
Abstract
The recently found Memristor is a potential candidate for the next-generation memory because of its nano-scale and non-volatile advantages. In this paper, a new Read/Write circuit design is proposed based on the Memristor as a memory element. The proposed circuit exhibits low power consumption, short delay time, and occupying less layout area. In addition, the proposed circuit has the advantage of non-destructive successive reading cycles capability.
Keywords
circuit layout; low-power electronics; memristor circuits; memristors; nondestructive readout; random-access storage; circuit delay time; circuit layout area; low power consumption; memristor-based memories; nondestructive read-write circuit; nondestructive successive reading cycles capability; Computational modeling; Integrated circuit modeling; Memristors; Random access memory; Semiconductor device modeling; Switches; Writing; Memristor; Non-volatile memory; Read/Write circuit; nano-computing storage;
fLanguage
English
Publisher
ieee
Conference_Titel
Engineering and Technology (ICET), 2014 International Conference on
Conference_Location
Cairo
Type
conf
DOI
10.1109/ICEngTechnol.2014.7016788
Filename
7016788
Link To Document