Title :
Arsenic vs. phosphorus emitters for radiation hardened power transistors
Author :
Bledsoe, Jerry L.
Author_Institution :
Semicond. Products Div., Adv. Product R&D Labs., Motorola, Phoenix, AZ, USA
Abstract :
The intent of this work was to determine what type of emitter, either arsenic or phosphorus, would yield a superior radiation tolerance. This was accomplished by fabricating devices of each type with thin heavily doped base and collector regions. All devices were irradiated to a neutron fluence of 3 × 1014n/cm2, 1 MEV equivalent. The results of this investigation did not support the hypothesis that arsenic was superior to phosphorus.
Keywords :
arsenic; neutron effects; phosphorus; power transistors; radiation hardening (electronics); As; P; arsenic emitters; devices fabrication; neutron fluence; phosphorus emitters; radiation hardened power transistors; superior radiation tolerance; thin heavily doped base regions; thin heavily doped collector regions; Integrated circuits; Junctions; Neutrons; Power transistors; RNA; Radiation hardening; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 1974 International
Conference_Location :
Washington, DC
DOI :
10.1109/IEDM.1974.6219760
