Title :
Effects of HCl-H2 pre-growth etching on quality of 6H-SiC epitaxial layers
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Yokosuka, Japan
Abstract :
The correlation between the HCl-H2 pre-growth etching of 6H-SiC substrates and the electrical characteristics of Schottky barrier diodes on the epitaxial layers has been investigated. The morphology of 6H-SiC (Si-face) off-axis substrates and the subsequent epitaxial layers was changed by the etching. Electrical measurements revealed that the impurity concentration of the epitaxial layers and the diode characteristics were affected by the pre-growth etching. It was shown that the leakage current of the diode could be reduced to 5×10-/8 Acm2 (at 200 V) by optimizing the etching
Keywords :
Schottky diodes; chemical vapour deposition; crystal morphology; etching; hydrogen; hydrogen compounds; impurity distribution; leakage currents; semiconductor device measurement; semiconductor epitaxial layers; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; 200 V; 6H-SiC epitaxial layer quality; 6H-SiC epitaxial layers; 6H-SiC off-axis substrate morphology; 6H-SiC substrates; CVD epitaxy; HCl-H2; HCl-H2 pre-growth etching; HCl-H2 pre-growth etching effects; Schottky barrier diodes; Si-face off-axis substrates; SiC; diode characteristics; electrical characteristics; electrical measurements; epitaxial layers; etch optimization; etching; impurity concentration; leakage current; pre-growth etching; Electric variables; Electric variables measurement; Epitaxial layers; Etching; Impurities; Leakage current; Morphology; Schottky barriers; Schottky diodes; Substrates;
Conference_Titel :
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-4437-5
DOI :
10.1109/HTEMDS.1998.730641
