DocumentCode
2346357
Title
Optical gain and continuous tuning of sub-millimeter injectionless hot hole p-Ge laser
Author
Vorobjev, L.E. ; Danilov, S.N. ; Firsov, D.A.
Author_Institution
Dept. of Semicond. Phys. & Nanoelectron., St. Petersburg State Tech. Univ., Russia
fYear
1996
fDate
13-18 Oct. 1996
Firstpage
121
Lastpage
122
Abstract
Tuned submillimeter (80-200 /spl mu/m) laser based on hole heating in germanium is designed and investigated in Faraday and Voight field configurations. GaAs-AlGaAs quantum well structures were investigated with this hot hole laser.
Keywords
Faraday effect; aluminium compounds; gallium arsenide; germanium; laser transitions; laser tuning; semiconductor lasers; semiconductor quantum wells; submillimetre wave lasers; 80 to 200 mum; Faraday field configurations; GaAs-AlGaAs; GaAs-AlGaAs quantum well structures; Ge; Voight field configurations; continuous tuning; hole heating; hot hole laser; optical gain; sub-millimeter injectionless hot hole p-Ge laser; Hot carriers; Laser modes; Laser theory; Laser transitions; Laser tuning; Optical resonators; Optical tuning; Quantum well lasers; Semiconductor lasers; Virtual colonoscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location
Haifa, Israel
Print_ISBN
0-7803-3163-X
Type
conf
DOI
10.1109/ISLC.1996.558749
Filename
558749
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