Non-destructive method of shear stress test by new test structure

Author

Matsushima, H. ; Wada, T.

Author_Institution

Quality Lab. Semicond. Group, Matsushita Electron. Corp., Kyoto, Japan

fYear

1995

fDate

22-25 Mar 1995

Firstpage

17

Lastpage

21

Abstract

A new test structure was developed for a nondestructive method. The purpose of this test structure is to detect the influence of thermomechanical stress between silicon chip and plastic resin. In this structure, detection of the failure is very easy, because the influence of thermomechanical stress can be detected electrically. By using this new structure, the following results were found: (1) Dependence on chip size; (2) Influence of layout of package; (3) Acceleration between heat shock and temperature cycle tests

Keywords

integrated circuit testing; nondestructive testing; stress measurement; thermal stresses; Si; electrical detection; failure; heat shock; nondestructive method; package; plastic resin; shear stress test; silicon chip; temperature cycle; thermomechanical stress; Electric shock; Life estimation; Nondestructive testing; Packaging; Plastics; Resins; Silicon; Temperature dependence; Thermal stresses; Thermomechanical processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on

Conference_Location

Nara

Print_ISBN

0-7803-2065-4

Type

conf

DOI

10.1109/ICMTS.1995.513938

Filename

513938