DocumentCode :
2346364
Title :
Non-destructive method of shear stress test by new test structure
Author :
Matsushima, H. ; Wada, T.
Author_Institution :
Quality Lab. Semicond. Group, Matsushita Electron. Corp., Kyoto, Japan
fYear :
1995
fDate :
22-25 Mar 1995
Firstpage :
17
Lastpage :
21
Abstract :
A new test structure was developed for a nondestructive method. The purpose of this test structure is to detect the influence of thermomechanical stress between silicon chip and plastic resin. In this structure, detection of the failure is very easy, because the influence of thermomechanical stress can be detected electrically. By using this new structure, the following results were found: (1) Dependence on chip size; (2) Influence of layout of package; (3) Acceleration between heat shock and temperature cycle tests
Keywords :
integrated circuit testing; nondestructive testing; stress measurement; thermal stresses; Si; electrical detection; failure; heat shock; nondestructive method; package; plastic resin; shear stress test; silicon chip; temperature cycle; thermomechanical stress; Electric shock; Life estimation; Nondestructive testing; Packaging; Plastics; Resins; Silicon; Temperature dependence; Thermal stresses; Thermomechanical processes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
Type :
conf
DOI :
10.1109/ICMTS.1995.513938
Filename :
513938
Link To Document :
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