Title :
Measurement of patterned film linewidth for interconnect characterization
Author :
Linholm, L.W. ; Allen, R.A. ; Cresswell, M.W. ; Ghoshtagore, R.N. ; Mayo, S. ; Schafft, H.A. ; Kramar, J.A. ; Teague, E.C.
Author_Institution :
Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Test results from high-quality electrical and physical measurements on the same cross-bridge resistor test structure with approximately vertical sidewalls have shown differences in linewidth as great as 90 nm for selected conductive films. These differences were independent of design linewidth. As dimensions become smaller, the accurate measurement of the patterned conductor width is necessary to assure predictable timing performance of the interconnect system as well as control of critical device parameters
Keywords :
integrated circuit interconnections; integrated circuit measurement; optical microscopy; scanning tunnelling microscopy; spatial variables measurement; STM probe; conductive films; conductor width; cross-bridge resistor test structure; interconnect characterization; linewidth measurement; patterned film linewidth; Atomic force microscopy; Atomic measurements; Coordinate measuring machines; Electric variables measurement; Electronic equipment testing; Integrated circuit interconnections; Optical films; Optical microscopy; Scanning electron microscopy; Semiconductor device measurement;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513939
