Measurement of patterned film linewidth for interconnect characterization

Author

Linholm, L.W. ; Allen, R.A. ; Cresswell, M.W. ; Ghoshtagore, R.N. ; Mayo, S. ; Schafft, H.A. ; Kramar, J.A. ; Teague, E.C.

Author_Institution

Semicond. Electron. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

1995

fDate

22-25 Mar 1995

Firstpage

23

Lastpage

26

Abstract

Test results from high-quality electrical and physical measurements on the same cross-bridge resistor test structure with approximately vertical sidewalls have shown differences in linewidth as great as 90 nm for selected conductive films. These differences were independent of design linewidth. As dimensions become smaller, the accurate measurement of the patterned conductor width is necessary to assure predictable timing performance of the interconnect system as well as control of critical device parameters

Keywords

integrated circuit interconnections; integrated circuit measurement; optical microscopy; scanning tunnelling microscopy; spatial variables measurement; STM probe; conductive films; conductor width; cross-bridge resistor test structure; interconnect characterization; linewidth measurement; patterned film linewidth; Atomic force microscopy; Atomic measurements; Coordinate measuring machines; Electric variables measurement; Electronic equipment testing; Integrated circuit interconnections; Optical films; Optical microscopy; Scanning electron microscopy; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on

Conference_Location

Nara

Print_ISBN

0-7803-2065-4

Type

conf

DOI

10.1109/ICMTS.1995.513939

Filename

513939