Title :
Low power ASIC for high temperature applications
Author :
Vermesan, O. ; Rispal, T. ; Soulier, L.
Author_Institution :
Dept. Microelectr.-ASICs, SINTEF Electron. & Cybern., Oslo, Norway
Abstract :
This paper describes the design and implementation of a low power/low voltage mixed signal BiCMOS ASIC that operates at temperatures up to 200°C. The ASIC is integrated into a gauge for downhole pressure and temperature measurements. It incorporates four measurement channels (CLK1-clock one, CLK2-clock two, P-pressure, T-temperature), with four high precision X-tal Pierce oscillators and a signal processing path for each channel. The output frequency from the CLK1 channel is used as a precision reference for the pressure and temperature channels and as an external clock. The ASIC is designed for high pressure transducers and incorporated into a downhole memory and wireline quartz gauge. The ASIC was fabricated into a 1.2 μm BiCMOS double poly, double metal process. The voltage supply range is from 5 V to 3.3 V and the circuit occupies a silicon area of 15 mm2. The ASIC is packaged in a ceramic 28 pin SOIC package
Keywords :
BiCMOS integrated circuits; ceramic packaging; crystal oscillators; geophysical equipment; geophysical signal processing; high-temperature electronics; integrated circuit design; integrated circuit packaging; mixed analogue-digital integrated circuits; pressure transducers; temperature measurement; 1.2 micron; 200 C; 5 to 3.3 V; ASIC design; BiCMOS double poly/double metal process; X-tal Pierce oscillators; ceramic SOIC package; clock one measurement channel; clock two measurement channel; downhole memory/wireline quartz gauge; downhole pressure/temperature measurement gauge; external clock; high temperature applications; low power ASIC; measurement channels; mixed signal BiCMOS ASIC; operating temperature; pressure measurement channel; pressure transducers; reference signal; signal processing path; silicon area; temperature measurement channel; voltage supply range; Application specific integrated circuits; BiCMOS integrated circuits; Clocks; Frequency; Low voltage; Oscillators; Packaging; Signal design; Signal processing; Temperature measurement;
Conference_Titel :
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-4437-5
DOI :
10.1109/HTEMDS.1998.730655