Recent advances in SOI materials and device technologies for high temperature

Author

Cristoloveanu, S. ; Reichert, G.

Author_Institution

Lab. de Physique des Composants a Semicond., CNRS, Grenoble, France

fYear

1998

fDate

22-27 Feb 1998

Firstpage

86

Lastpage

93

Abstract

The present status of silicon-on-insulator (SOI) technologies, structures and devices is reviewed with the aim of demonstrating the attractiveness of CMOS SOI for high-temperature applications. The basic MOSFET parameters (leakage current, threshold voltage, carrier mobility and subthreshold swing) are described as a function of temperature up to 300°C. The temperature behaviour of more specific SOI mechanisms, induced by the floating body, interface coupling and parasitic bipolar transistor, is also discussed

Keywords

CMOS integrated circuits; MOSFET; carrier mobility; high-temperature electronics; integrated circuit design; leakage currents; silicon-on-insulator; 300 C; CMOS SOI; MOSFET parameters; SOI device technologies; SOI devices; SOI materials; SOI mechanisms; SOI structures; SOI technologies; Si-SiO₂; carrier mobility; floating body effect; high temperature applications; interface coupling; leakage current; parasitic bipolar transistor; silicon-on-insulator; subthreshold swing; threshold voltage; Bipolar transistors; Dielectric substrates; Electrons; Integrated circuit synthesis; Leakage current; MOSFET circuits; Semiconductor materials; Silicon on insulator technology; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High-Temperature Electronic Materials, Devices and Sensors Conference, 1998

Conference_Location

San Diego, CA

Print_ISBN

0-7803-4437-5

Type

conf

DOI

10.1109/HTEMDS.1998.730656

Filename

730656