Title :
Room temperature CW laser diode at 485 nm
Author :
Grillo, D.C. ; Baude, P.F. ; Miller, T.J. ; Law, K.K. ; Haugen, G.M. ; Haase, M.A. ; Buijs, M. ; Haberem, W. ; Shahzad, K.
Author_Institution :
Sci. Res. Lab., 3M Co., St Paul, MN, USA
Abstract :
Since the first demonstrations of II-VI laser diodes, researchers have been working towards long lifetime room temperature CW devices. In this paper, we report improved room temperature CW lifetime (2.15 minutes) and device performance characteristics at an emission wavelength of 485 nm. The laser structure which was grown by molecular beam epitaxy (MBE) contained (Zn,Mg)(S,Se) cladding and waveguiding layers surrounding a single (Zn,Cd)(S,Se) quantum well.
Keywords :
II-VI semiconductors; cadmium compounds; quantum well lasers; zinc compounds; (Zn,Cd)(S,Se) quantum well; 485 nm; II-VI semiconductor; ZnCdSSe-ZnMgSSe; lifetime; room temperature CW laser diode; Density measurement; Diode lasers; Laboratories; Laser theory; Molecular beam epitaxial growth; Quantum well lasers; Stacking; Temperature; Threshold current; Threshold voltage;
Conference_Titel :
Device Research Conference, 1996. Digest. 54th Annual
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-3358-6
DOI :
10.1109/DRC.1996.546331
