Title :
An electrical test structure to evaluate linewidth variations due to proximity effects in optical lithography
Author :
Fallon, M. ; Stevenson, J.T.M. ; Walton, A.J. ; Gundlac, A.M.
Author_Institution :
Dept. of Electr. Eng., Edinburgh Univ., UK
Abstract :
A simple test structure is used in the investigation of linewidth variation at topographical edges. Preliminary qualititative results for electrical linewidth variations are presented and correlated with SEM inspection. A linewidth reduction is observed as the two features on different layers draw closer together and it is demonstrated that this approach is sensitive enough to enable lithography engineers to optimise resist processing to minimise this effect
Keywords :
integrated circuit measurement; integrated circuit testing; photolithography; proximity effect (lithography); spatial variables measurement; electrical test structure; linewidth variations; optical lithography; proximity effects; Current measurement; Electric resistance; Electrical resistance measurement; Fabrication; Lithography; Optical sensors; Proximity effect; Resists; Testing; Voltage;
Conference_Titel :
Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on
Conference_Location :
Nara
Print_ISBN :
0-7803-2065-4
DOI :
10.1109/ICMTS.1995.513941
