Title :
Recent advances in GaAs devices for use at high temperatures
Author_Institution :
Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
A review of technologies for GaAs high temperature electronic devices and integrated circuits is presented. Starting with the high temperature related material properties of GaAs and related heterostructures, key issues for GaAs-based high temperature devices are identified and state of the art solutions are discussed. This includes, for example, high temperature stable metallizations, technologies for substrate leakage reduction and other topics. Based on these results, the most important transistor technologies for high temperature applications (MESFETs, HFETs, HEMTs, JFETs and HBTs) are introduced and compared. The paper closes with a short review of analogue and microwave integrated circuits operating at high temperatures
Keywords :
III-V semiconductors; MESFET integrated circuits; Schottky gate field effect transistors; field effect MMIC; field effect analogue integrated circuits; field effect transistors; gallium arsenide; heterojunction bipolar transistors; high electron mobility transistors; high-temperature electronics; integrated circuit interconnections; integrated circuit metallisation; junction gate field effect transistors; leakage currents; reviews; semiconductor device metallisation; thermal stability; GaAs; GaAs devices; GaAs heterostructures; GaAs high temperature electronic devices; GaAs high temperature integrated circuits; HBTs; HEMTs; HFETs; JFETs; MESFETs; analogue integrated circuits; high temperature related material properties; high temperature stable metallizations; high temperature transistor technologies; microwave integrated circuits; substrate leakage reduction technology; Gallium arsenide; HEMTs; Integrated circuit technology; JFETs; MESFETs; MODFETs; Material properties; Metallization; Microwave transistors; Temperature;
Conference_Titel :
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-4437-5
DOI :
10.1109/HTEMDS.1998.730659
