Research of DC-DC power supply for IGCT gate unit

The integrated gate commutated thyristor (IGCT), a new high frequency, high power semiconductor, has been applied in more and more medium voltage industrial areas because it combines the advantages of IGBT and GTO. IGCT integrates a standard gate unit, so the gate unit power supply´s output as well as its supply cable has to withstand the high voltage of the power semiconductor. As a result, there are strict requirements of DC-DC power supply for the gate unit, such as high output voltage precision, over/under voltage protection and optical control interface which are all introduced in this paper. At the same time, we analyze DC-DC converter´s forward topology, pulse generator, transformer, voltage stabilizer and offer some measured waves to prove its well performance.