Title :
Research of DC-DC power supply for IGCT gate unit
Author :
Li, Jianxu ; Huang, Xianjin ; Zhang, Liwei ; Zheng, Trillion Q.
Author_Institution :
Sch. of Electr. Eng., Beijing Jiaotong Univ., Beijing
Abstract :
The integrated gate commutated thyristor (IGCT), a new high frequency, high power semiconductor, has been applied in more and more medium voltage industrial areas because it combines the advantages of IGBT and GTO. IGCT integrates a standard gate unit, so the gate unit power supply´s output as well as its supply cable has to withstand the high voltage of the power semiconductor. As a result, there are strict requirements of DC-DC power supply for the gate unit, such as high output voltage precision, over/under voltage protection and optical control interface which are all introduced in this paper. At the same time, we analyze DC-DC converter´s forward topology, pulse generator, transformer, voltage stabilizer and offer some measured waves to prove its well performance.
Keywords :
DC-DC power convertors; commutators; power supplies to apparatus; pulse generators; pulse transformers; thyristor convertors; voltage regulators; DC-DC power supply; IGCT gate unit; high-power semiconductor; integrated gate commutated thyristor; optical control interface; overvoltage protection; power semiconductor; pulse generator; pulse transformer; undervoltage protection; voltage stabilizer; DC-DC power converters; Electricity supply industry; Frequency; Insulated gate bipolar transistors; Medium voltage; Optical control; Performance analysis; Power supplies; Protection; Thyristors;
Conference_Titel :
Industrial Electronics and Applications, 2008. ICIEA 2008. 3rd IEEE Conference on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-1717-9
Electronic_ISBN :
978-1-4244-1718-6
DOI :
10.1109/ICIEA.2008.4582823
