Title :
High temperature performance of hybrid GaN/SiC high power diodes
Author :
Trivedi, M. ; Shenai, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
Wide bandgap semiconductors are being explored for use in high power, high temperature applications. It is difficult to find a single material that meets all requirements. Improved performance in high power rectification applications can be achieved by a novel hybrid device consisting of GaN and SiC epitaxial layers. This paper presents a simulation study of the electrical characteristics of such a device. The device exploits advantages of GaN and SiC diodes to achieve improved on-state and switching characteristics with better thermal handling capability
Keywords :
III-V semiconductors; gallium compounds; high-temperature electronics; power semiconductor diodes; power semiconductor switches; semiconductor device models; semiconductor epitaxial layers; silicon compounds; thermal analysis; wide band gap semiconductors; GaN diodes; GaN epitaxial layers; GaN-SiC; SiC diodes; SiC epitaxial layers; electrical characteristics; high power applications; high temperature applications; high temperature performance; hybrid GaN/SiC high power diodes; hybrid device; on-state characteristics; power rectification applications; simulation; switching characteristics; thermal handling capability; wide bandgap semiconductors; Chemical technology; Conducting materials; Gallium nitride; Photonic band gap; Power electronics; Semiconductor diodes; Semiconductor materials; Silicon carbide; Temperature; Thermal conductivity;
Conference_Titel :
High-Temperature Electronic Materials, Devices and Sensors Conference, 1998
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-4437-5
DOI :
10.1109/HTEMDS.1998.730660
