Title :
Wavelength and threshold current stabilization of an uncooled diode laser, using thermal stress
Author :
Cohen, Daniel A. ; Coldren, Larry A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We show that strain from differential thermal expansion may be used to stabilize the wavelength and threshold current of an uncooled GaInAs/InP laser, and demonstrate a 50% reduction in wavelength drift, using a thermal-stress-engineered package.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser frequency stability; semiconductor device testing; semiconductor lasers; thermal expansion; thermal stresses; GaInAs-InP; GaInAs/InP laser; differential thermal expansion; strain; thermal stress; thermal-stress-engineered package; threshold current; threshold current stabilization; uncooled diode laser; wavelength drift; wavelength stabilization; Capacitive sensors; Diode lasers; Laser stability; Lenses; Packaging; Temperature sensors; Thermal engineering; Thermal expansion; Thermal stresses; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558763
