Leak current characterization in high frequency operation of CMOS circuits fabricated on SOI substrate

Author

Ito, H. ; Asada, K.

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

fYear

1995

fDate

22-25 Mar 1995

Firstpage

67

Lastpage

70

Abstract

Threshold voltage shift in high frequency operation of CMOS/SOI is experimentally studied, using supply current measurement of inverter chains as test structures. For a large supply voltage the electron-hole generation current becomes dominant, resulting in a lower threshold voltage, while the threshold voltage becomes higher than the DC case for a low supply voltage. This method will be useful as a measure of “substrate current” for floating body CMOS/SOI

Keywords

CMOS integrated circuits; electric current measurement; integrated circuit measurement; integrated circuit reliability; integrated circuit testing; leakage currents; silicon-on-insulator; CMOS circuits; HF operation; SOI substrate; electron-hole generation current; floating body CMOS/SOI; inverter chains; leakage current characterization; substrate current; supply current measurement; test structures; threshold voltage shift; CMOS technology; Current measurement; FETs; Frequency; Inverters; Low voltage; MOSFET circuits; Semiconductor device modeling; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1995. ICMTS 1995. Proceedings of the 1995 International Conference on

Conference_Location

Nara

Print_ISBN

0-7803-2065-4

Type

conf

DOI

10.1109/ICMTS.1995.513947

Filename

513947