Title :
Intrinsic modulation bandwidth of strained GaInP/AlGaInP quantum well lasers
Author :
Moritz, A. ; Wirth, R. ; Heppel, S. ; Geng, C. ; Kuhn, J. ; Schweizer, H. ; Scholz, F. ; Hangleiter, A.
Author_Institution :
4. Phys. Inst., Stuttgart Univ., Germany
Abstract :
We have measured the high frequency response of Ga/sub x/In/sub 1-x/P/AlGaInP quantum well lasers. We found a maximum bandwidth of 7.5 GHz at -3 dB for a strongly compressively strained sample which is limited by catastrophic optical damage.
Keywords :
III-V semiconductors; aluminium compounds; frequency response; gallium compounds; indium compounds; laser beams; laser variables measurement; optical modulation; quantum well lasers; 7.5 GHz; GaInP-AlGaInP; GaInP/AlGaInP; GaInP/AlGaInP quantum well lasers; catastrophic optical damage; high frequency response; intrinsic modulation bandwidth; maximum bandwidth; strained quantum well lasers; strongly compressively strained sample; Bandwidth; Fiber nonlinear optics; Frequency measurement; Frequency response; High speed optical techniques; Laser modes; Nonlinear optics; Optical filters; Optical modulation; Quantum well lasers;
Conference_Titel :
Semiconductor Laser Conference, 1996., 15th IEEE International
Conference_Location :
Haifa, Israel
Print_ISBN :
0-7803-3163-X
DOI :
10.1109/ISLC.1996.558764
